Issue |
Renew. Energy Environ. Sustain.
Volume 1, 2016
|
|
---|---|---|
Article Number | 3 | |
Number of page(s) | 5 | |
DOI | https://doi.org/10.1051/rees/2016003 | |
Published online | 23 May 2016 |
Research Article
Quantum mechanical effects analysis of nanostructured solar cell models
1 Academic Center for Optical Engineering and Photonics, Faculty of Applied Sciences, University “Politehnica” of Bucharest, 313 Splaiul Independentei, 060042 Bucharest, Romania
2 Academy of Romanian Scientists, 54 Splaiul Independentei, 050094 Bucharest, Romania
⁎ e-mail: florin.dragan@sdettib.pub.ro
The quantum mechanical effects resulted from the inclusion of nanostructures, represented by quantum wells and quantum dots, in the i-layer of an intermediate band solar cell will be analyzed. We will discuss the role of these specific nanostructures in the increasing of the solar cells efficiency. InAs quantum wells being placed in the i-layer of a gallium arsenide (GaAs) p-i-n cell, we will analyze the quantum confined regions and determine the properties of the eigenstates located therein. Also, we simulate the electroluminescence that occurs due to the nanostructured regions.
© A. Badea et al., published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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